P6SMB30CAHM3_A/I vs P6SMB30CA feature comparison

P6SMB30CAHM3_A/I Vishay Intertechnologies

Buy Now Datasheet

P6SMB30CA Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Package Description SMB, 2 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2019-02-07
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 31.5 V 31.5 V
Breakdown Voltage-Min 28.5 V 28.5 V
Breakdown Voltage-Nom 30 V 30 V
Clamping Voltage-Max 41.4 V 41.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Reference Standard AEC-Q101 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 25.6 V 25.6 V
Reverse Current-Max 1 µA
Reverse Test Voltage 25.6 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 29
Factory Lead Time 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Qualification Status Not Qualified

Compare P6SMB30CAHM3_A/I with alternatives

Compare P6SMB30CA with alternatives