P6SMB30AT3G
vs
P6SMB30A-E3/51
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
LITTELFUSE INC
VISHAY SEMICONDUCTORS
Package Description
R-PDSO-C2
R-PDSO-C2
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Samacsys Manufacturer
LITTELFUSE
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max
31.5 V
31.5 V
Breakdown Voltage-Min
28.5 V
28.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.55 W
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
25.6 V
25.6 V
Surface Mount
YES
YES
Technology
ZENER
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
2
1
Part Package Code
DO-214AA
Pin Count
2
Breakdown Voltage-Nom
30 V
Clamping Voltage-Max
41.4 V
JEDEC-95 Code
DO-214AA
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
MATTE TIN
Compare P6SMB30AT3G with alternatives
Compare P6SMB30A-E3/51 with alternatives