P6SMB30APBFREE
vs
P6SMB30ATRTB
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
|
| Package Description |
R-PDSO-C2
|
|
| Reach Compliance Code |
compliant
|
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Breakdown Voltage-Max |
31.5 V
|
|
| Breakdown Voltage-Min |
28.5 V
|
|
| Breakdown Voltage-Nom |
30 V
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
|
| JESD-30 Code |
R-PDSO-C2
|
|
| JESD-609 Code |
e3
|
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Rep Pk Reverse Voltage-Max |
25.6 V
|
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Test Voltage |
25.6 V
|
|
| Surface Mount |
YES
|
|
| Technology |
AVALANCHE
|
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
C BEND
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
1
|
|
|
|
|
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