P6SMB30A vs P6SMB30A-M3/5B feature comparison

P6SMB30A Telefunken Microelectronics Gmbh

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P6SMB30A-M3/5B Vishay Semiconductors

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Part Life Cycle Code Transferred Active
Ihs Manufacturer TELEFUNKEN MICROELECTRONICS GMBH VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Base Number Matches 31 2
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 31.5 V
Breakdown Voltage-Min 28.5 V
Breakdown Voltage-Nom 30 V
Clamping Voltage-Max 41.4 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 25.6 V
Reverse Current-Max 1 µA
Reverse Test Voltage 25.6 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

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