P6SMB22AHE3/5B vs P6SMBJ22-AU_R2_000A1 feature comparison

P6SMB22AHE3/5B Vishay Semiconductors

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P6SMBJ22-AU_R2_000A1 PanJit Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY SEMICONDUCTORS PAN JIT INTERNATIONAL INC
Part Package Code DO-214AA
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max 23.1 V 30.9 V
Breakdown Voltage-Min 20.9 V 24.4 V
Breakdown Voltage-Nom 22 V 27.65 V
Case Connection ISOLATED
Clamping Voltage-Max 30.6 V 39.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 18.8 V 22 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 1
Reference Standard AEC-Q101; IEC-61000-4-2; TS 16949; UL RECOGNIZED

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Compare P6SMBJ22-AU_R2_000A1 with alternatives