P6SMB200C-AU_R2_000A1 vs P6SMB200CA feature comparison

P6SMB200C-AU_R2_000A1 PanJit Semiconductor

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P6SMB200CA Thinking Electronic Industrial Co Ltd

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC THINKING ELECTRONIC INDUSTRIAL CO LTD
Package Description R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 220 V 210 V
Breakdown Voltage-Min 180 V 190 V
Breakdown Voltage-Nom 200 V 200 V
Clamping Voltage-Max 287 V 274 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard AEC-Q101; IEC-61000-4-2; TS 16949 MIL-STD-750
Rep Pk Reverse Voltage-Max 162 V 171 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Base Number Matches 1 27
Date Of Intro 2018-02-22
JESD-609 Code e3
Power Dissipation-Max 5 W
Reverse Current-Max 1 µA
Reverse Test Voltage 171 V
Terminal Finish Matte Tin (Sn)

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