P6SMB200C-AU_R1_100A1 vs P6SMB200C_R2_00001 feature comparison

P6SMB200C-AU_R1_100A1 PanJit Semiconductor

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P6SMB200C_R2_00001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC PAN JIT INTERNATIONAL INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 220 V 220 V
Breakdown Voltage-Min 180 V 180 V
Breakdown Voltage-Nom 200 V 200 V
Clamping Voltage-Max 287 V 287 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard AEC-Q101; TS 16949 IEC-61000-4-2
Rep Pk Reverse Voltage-Max 162 V 162 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Pbfree Code Yes
JESD-609 Code e3
Reverse Current-Max 1 µA
Reverse Test Voltage 162 V
Terminal Finish TIN

Compare P6SMB200C-AU_R1_100A1 with alternatives

Compare P6SMB200C_R2_00001 with alternatives