P6SMB200A vs P6SMB200ATR13 feature comparison

P6SMB200A MDE Semiconductor Inc

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P6SMB200ATR13 Central Semiconductor Corp

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Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 210 V 210 V
Breakdown Voltage-Min 190 V 190 V
Breakdown Voltage-Nom 200 V 200 V
Clamping Voltage-Max 274 V 274 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard UL CERTIFIED
Rep Pk Reverse Voltage-Max 171 V 171 V
Reverse Current-Max 5 µA
Reverse Test Voltage 171 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 31 1
Pbfree Code No
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish TIN LEAD

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