P6SMB200A
vs
P6SMB200AHE3_A/H
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MDE SEMICONDUCTOR INC
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
210 V
210 V
Breakdown Voltage-Min
190 V
190 V
Breakdown Voltage-Nom
200 V
200 V
Clamping Voltage-Max
274 V
274 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
5 W
Reference Standard
UL CERTIFIED
AEC-Q101
Rep Pk Reverse Voltage-Max
171 V
171 V
Reverse Current-Max
5 µA
Reverse Test Voltage
171 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
31
1
Package Description
SMBJ, 2 PIN
Factory Lead Time
76 Weeks
Samacsys Manufacturer
Vishay
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
30
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