P6SMB18CHR5G vs SMBJ14C-5B-E3 feature comparison

P6SMB18CHR5G Taiwan Semiconductor

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SMBJ14C-5B-E3 Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD VISHAY SEMICONDUCTORS
Package Description SMB, 2 PIN R-PDSO-C2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 19.8 V 19.1 V
Breakdown Voltage-Min 16.2 V 15.6 V
Breakdown Voltage-Nom 18 V 17.35 V
Clamping Voltage-Max 26.5 V 25.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W
Reference Standard AEC-Q101 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 14.5 V 14 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Part Package Code DO-214AA
Pin Count 2
Qualification Status Not Qualified

Compare P6SMB18CHR5G with alternatives

Compare SMBJ14C-5B-E3 with alternatives