P6SMB180CATR13 vs SMBJP6KE180CA feature comparison

P6SMB180CATR13 Central Semiconductor Corp

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SMBJP6KE180CA Microsemi Corporation

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP MICROSEMI CORP
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 189 V 189 V
Breakdown Voltage-Min 171 V 171 V
Breakdown Voltage-Nom 180 V 180 V
Clamping Voltage-Max 246 V 246 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 154 V 154 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
Part Package Code DO-214AA
Package Description PLASTIC, SMBJ, 2 PIN
Pin Count 2
JEDEC-95 Code DO-214AA
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W

Compare P6SMB180CATR13 with alternatives

Compare SMBJP6KE180CA with alternatives