P6SMB180A-M3/5B
vs
SMBJP6KE180A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
VISHAY SEMICONDUCTORS
MICROSEMI CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
189 V
189 V
Breakdown Voltage-Min
171 V
171 V
Breakdown Voltage-Nom
180 V
180 V
Clamping Voltage-Max
246 V
246 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-214AA
DO-214AA
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
1.38 W
Rep Pk Reverse Voltage-Max
154 V
154 V
Reverse Current-Max
1 µA
Reverse Test Voltage
154 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
TIN LEAD
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
2
2
Pbfree Code
Rohs Code
Part Package Code
DO-214AA
Package Description
PLASTIC, SMBJ, 2 PIN
Pin Count
2
Qualification Status
Not Qualified
Compare P6SMB180A-M3/5B with alternatives
Compare SMBJP6KE180A with alternatives