P6SMB170AHE3_A/I vs P6SMB170AT3 feature comparison

P6SMB170AHE3_A/I Vishay Intertechnologies

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P6SMB170AT3 Freescale Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MOTOROLA SEMICONDUCTOR PRODUCTS
Package Description SMBJ, 2 PIN
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 76 Weeks
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 179 V
Breakdown Voltage-Min 162 V
Breakdown Voltage-Nom 170 V 170 V
Clamping Voltage-Max 234 V 234 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 145 V 145 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 4

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