P6SMB13AHR4G vs SMBJ11TRE3 feature comparison

P6SMB13AHR4G Taiwan Semiconductor

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SMBJ11TRE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROSEMI CORP
Package Description SMB, 2 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY TR, 7 INCH: 750
Breakdown Voltage-Max 13.7 V
Breakdown Voltage-Min 12.4 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 11.1 V 11 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Breakdown Voltage-Nom 13.55 V
Clamping Voltage-Max 20.1 V
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10

Compare P6SMB13AHR4G with alternatives

Compare SMBJ11TRE3 with alternatives