P6SMB10ABK vs P6SMB10AHE3_A/I feature comparison

P6SMB10ABK Central Semiconductor Corp

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P6SMB10AHE3_A/I Vishay Intertechnologies

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP VISHAY INTERTECHNOLOGY INC
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 10.5 V 10.5 V
Breakdown Voltage-Min 9.5 V 9.5 V
Breakdown Voltage-Nom 10 V 10 V
Clamping Voltage-Max 14.5 V 14.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 8.55 V 8.55 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description SMBJ, 2 PIN
Additional Feature EXCELLENT CLAMPING CAPABILITY
JEDEC-95 Code DO-214AA
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 5 W
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30

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