P6KE91AE3 vs 1N5631A feature comparison

P6KE91AE3 Microsemi Corporation

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1N5631A Microchip Technology Inc

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Package Description T-18, 2 PIN HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Pin Count 2
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 95.5 V 8.61 V
Breakdown Voltage-Min 86.5 V 7.79 V
Breakdown Voltage-Nom 91 V
Case Connection ISOLATED CATHODE
Clamping Voltage-Max 125 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JESD-30 Code O-PALF-W2 O-MALF-W2
JESD-609 Code e3 e0
Non-rep Peak Rev Power Dis-Max 600 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 77.8 V 7.02 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 65 6
Factory Lead Time 21 Weeks
JEDEC-95 Code DO-202AA

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