P6KE9.1C-T3 vs P6KE9.1CA-G feature comparison

P6KE9.1C-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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P6KE9.1CA-G Comchip Technology Corporation Ltd

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD COMCHIP TECHNOLOGY CO LTD
Package Description O-PALF-W2
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 10 V
Breakdown Voltage-Min 8.19 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 7.37 V 7.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 4
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 9.1 V
Clamping Voltage-Max 13.4 V
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10

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