P6KE75C vs P4KE82CA feature comparison

P6KE75C International Semiconductor Inc

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P4KE82CA Formosa Microsemi Co Ltd

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC FORMOSA MICROSEMI CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW IMPEDANCE EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 82.5 V 86.1 V
Breakdown Voltage-Min 67.5 V 77.9 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 108 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 4
Rohs Code Yes
JEDEC-95 Code DO-41
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 70.1 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare P6KE75C with alternatives

Compare P4KE82CA with alternatives