P6KE68CATR vs P6KE68CE3 feature comparison

P6KE68CATR MDE Semiconductor Inc

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P6KE68CE3 Microsemi Corporation

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Base Number Matches 4 1
Pbfree Code Yes
Rohs Code Yes
Package Description O-PALF-W2
Pin Count 2
Breakdown Voltage-Max 74.8 V
Breakdown Voltage-Min 61.2 V
Breakdown Voltage-Nom 68 V
Case Connection ISOLATED
Clamping Voltage-Max 98 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 55.1 V
Surface Mount NO
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL

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