P6KE62B
vs
P6KE62A-G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
DIODES INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
O-LALF-W2
O-PALF-W2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Min
55.8 V
58.9 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
89 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Not Qualified
Not Qualified
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
Rohs Code
Breakdown Voltage-Max
65.1 V
JEDEC-95 Code
DO-15
Moisture Sensitivity Level
1
Power Dissipation-Max
5 W
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
53 V
Compare P6KE62B with alternatives
Compare P6KE62A-G with alternatives