P6KE56CAHE3/54
vs
1.5KE47HB0G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
TAIWAN SEMICONDUCTOR CO LTD
Package Description
DO-15, 2 PIN
O-PALF-W2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
58.8 V
51.7 V
Breakdown Voltage-Min
53.2 V
42.3 V
Breakdown Voltage-Nom
56 V
47 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
77 V
67.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-204AC
DO-201
JESD-30 Code
O-XALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
600 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Reference Standard
AEC-Q101; UL RECOGNIZED
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
47.8 V
38.1 V
Reverse Current-Max
1 µA
Reverse Test Voltage
47.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
3
1
Rohs Code
JESD-609 Code
e3
Terminal Finish
MATTE TIN
Compare P6KE56CAHE3/54 with alternatives
Compare 1.5KE47HB0G with alternatives