P6KE550A vs P6KE550A feature comparison

P6KE550A Sangdest Microelectronics (Nanjing) Co Ltd

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P6KE550A Secos Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SECOS CORP
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 577.5 V
Breakdown Voltage-Min 522.5 V
Breakdown Voltage-Nom 550 V
Case Connection ISOLATED
Clamping Voltage-Max 760 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 467 V
Reverse Current-Max 5 µA
Reverse Test Voltage 467 V
Surface Mount NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1