P6KE51G-Z15-R
vs
P6SE51A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
UNISONIC TECHNOLOGIES CO LTD
SEMICON COMPONENTS INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
56.1 V
53.6 V
Breakdown Voltage-Min
45.9 V
48.5 V
Breakdown Voltage-Nom
51 V
51 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
73.5 V
70.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-15
JESD-30 Code
O-PALF-W2
O-XALF-W2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Rep Pk Reverse Voltage-Max
41.3 V
44 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Rohs Code
Package Description
O-XALF-W2
JESD-609 Code
e0
Qualification Status
Not Qualified
Reverse Current-Max
5 µA
Terminal Finish
TIN LEAD
Compare P6KE51G-Z15-R with alternatives
Compare P6SE51A with alternatives