P6KE51AHB0G vs P6KE51AHR0 feature comparison

P6KE51AHB0G Taiwan Semiconductor

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P6KE51AHR0 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 53.6 V 53.6 V
Breakdown Voltage-Min 48.5 V 48.5 V
Breakdown Voltage-Nom 51 V 51 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 70.1 V 70.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AC DO-204AC
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Reference Standard AEC-Q101; UL RECOGNIZED AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 43.6 V 43.6 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10

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