P6KE39B vs P6KE39-T3 feature comparison

P6KE39B Diodes Incorporated

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P6KE39-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer DIODES INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description O-LALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Min 35.1 V 35.1 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 56.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Rohs Code No
Breakdown Voltage-Max 42.9 V
JEDEC-95 Code DO-15
Moisture Sensitivity Level 1
Power Dissipation-Max 5 W
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 31.6 V

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