P6KE39B vs P6KE39-AU_R2_000A1 feature comparison

P6KE39B Diodes Incorporated

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P6KE39-AU_R2_000A1 PanJit Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer DIODES INC PAN JIT INTERNATIONAL INC
Package Description O-LALF-W2 O-PALF-W2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Min 35.1 V 35.1 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 56.4 V 56.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Rohs Code Yes
Breakdown Voltage-Max 42.9 V
Breakdown Voltage-Nom 39 V
JEDEC-95 Code DO-15
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard AEC-Q101; TS 16949; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 31.6 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare P6KE39B with alternatives

Compare P6KE39-AU_R2_000A1 with alternatives