P6KE39A-H vs P6KE39ATR feature comparison

P6KE39A-H Formosa Microsemi Co Ltd

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P6KE39ATR MDE Semiconductor Inc

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer FORMOSA MICROSEMI CO LTD MDE SEMICONDUCTOR INC
Package Description O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 41 V
Breakdown Voltage-Min 37.1 V
Breakdown Voltage-Nom 39.05 V
Case Connection ISOLATED
Clamping Voltage-Max 53.9 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 33.3 V
Surface Mount NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 4

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