P6KE39A
vs
1N6381
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
INTERNATIONAL SEMICONDUCTOR INC
|
MDE SEMICONDUCTOR INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
LOW IMPEDANCE
|
|
| Breakdown Voltage-Max |
41 V
|
|
| Breakdown Voltage-Min |
37.1 V
|
|
| Breakdown Voltage-Nom |
39 V
|
|
| Case Connection |
ISOLATED
|
|
| Clamping Voltage-Max |
53.9 V
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-PALF-W2
|
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
1 W
|
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
33.3 V
|
|
| Reverse Current-Max |
5 µA
|
|
| Surface Mount |
NO
|
|
| Technology |
AVALANCHE
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Base Number Matches |
76
|
17
|
| Rohs Code |
|
Yes
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
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