P6KE33C-PBF
vs
P6KE33CE3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
DIGITRON SEMICONDUCTORS
MICROSEMI CORP
Package Description
O-XALF-W2
O-PALF-W2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
36.3 V
36.3 V
Breakdown Voltage-Min
29.7 V
29.7 V
Breakdown Voltage-Nom
33 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
47.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-15
JESD-30 Code
O-XALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Rep Pk Reverse Voltage-Max
26.8 V
26.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Pin Count
2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Compare P6KE33C-PBF with alternatives
Compare P6KE33CE3TR with alternatives