P6KE33C-E3/54
vs
P6KE33CHR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
DIGITRON SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
36.3 V
36.3 V
Breakdown Voltage-Min
29.7 V
29.7 V
Breakdown Voltage-Nom
33 V
33 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
47.7 V
47.7 V
Configuration
SINGLE
SINGLE
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-204AC
DO-15
JESD-30 Code
O-PALF-W2
O-XALF-W2
JESD-609 Code
e3
e0
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Rep Pk Reverse Voltage-Max
26.8 V
26.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
1
Package Description
O-XALF-W2
Additional Feature
HIGH RELIABILITY
Diode Element Material
SILICON
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Reference Standard
MIL-19500
Compare P6KE33CHR with alternatives