P6KE33B0G vs P6KE33AHE3AMP feature comparison

P6KE33B0G Taiwan Semiconductor

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P6KE33AHE3AMP Fagor Electrónica

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD FAGOR ELECTRONICA S COOP
Package Description O-PALF-W2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 36.3 V
Breakdown Voltage-Min 29.7 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AC
JESD-30 Code O-PALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 26.8 V 28.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Base Number Matches 1 1
Breakdown Voltage-Nom 33 V
Clamping Voltage-Max 45.7 V

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