P6KE33AB0G
vs
P6KE33AHE3AMP
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
|
| Package Description |
O-PALF-W2
|
|
| Reach Compliance Code |
compliant
|
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY
|
|
| Breakdown Voltage-Max |
34.7 V
|
|
| Breakdown Voltage-Min |
31.4 V
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
|
| JEDEC-95 Code |
DO-204AC
|
|
| JESD-30 Code |
O-PALF-W2
|
|
| JESD-609 Code |
e3
|
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
5 W
|
|
| Reference Standard |
UL RECOGNIZED
|
|
| Rep Pk Reverse Voltage-Max |
28.2 V
|
|
| Surface Mount |
NO
|
|
| Technology |
AVALANCHE
|
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Base Number Matches |
1
|
|
|
|
|
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