P6KE30A
vs
P6KE30A-GT3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Min
28.5 V
28.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-15
DO-15
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
25.6 V
25.6 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
76
2
Rohs Code
Package Description
O-PALF-W2
Breakdown Voltage-Max
31.5 V
Case Connection
ISOLATED
Moisture Sensitivity Level
1
Power Dissipation-Max
5 W
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
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