P6KE200A_R2_00001 vs P6KE200A feature comparison

P6KE200A_R2_00001 PanJit Semiconductor

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P6KE200A Galaxy Semi-Conductor Co Ltd

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PANJIT INTERNATIONAL INC GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 210 V 210 V
Breakdown Voltage-Min 190 V 190 V
Breakdown Voltage-Nom 200 V 200 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 274 V 274 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -50 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 171 V 171 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 78
Part Package Code DO-15
Package Description O-PALF-W2
Pin Count 2
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 5 W

Compare P6KE200A_R2_00001 with alternatives

Compare P6KE200A with alternatives