P6KE200A_R2_00001
vs
P6KE200A
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PANJIT INTERNATIONAL INC
GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max
210 V
210 V
Breakdown Voltage-Min
190 V
190 V
Breakdown Voltage-Nom
200 V
200 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
274 V
274 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-15
DO-15
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-50 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
171 V
171 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin (Sn)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
78
Part Package Code
DO-15
Package Description
O-PALF-W2
Pin Count
2
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
5 W
Compare P6KE200A_R2_00001 with alternatives
Compare P6KE200A with alternatives