P6KE200A-GT3
vs
P6KE200ATA
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
ON SEMICONDUCTOR
Package Description
O-PALF-W2
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
210 V
Breakdown Voltage-Min
190 V
Case Connection
ISOLATED
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-15
JESD-30 Code
O-PALF-W2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
ROUND
Package Style
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
171 V
171 V
Surface Mount
NO
NO
Technology
AVALANCHE
Terminal Form
WIRE
Terminal Position
AXIAL
Base Number Matches
2
4
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
200 V
Clamping Voltage-Max
274 V
JESD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
Compare P6KE200A-GT3 with alternatives