P6KE160A vs P6KE160A-GT3 feature comparison

P6KE160A Galaxy Microelectronics

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P6KE160A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-15
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 168 V 168 V
Breakdown Voltage-Min 152 V 152 V
Breakdown Voltage-Nom 160 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 219 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -50 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Rep Pk Reverse Voltage-Max 136 V 136 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 77 2
Package Description O-PALF-W2
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED

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Compare P6KE160A-GT3 with alternatives