P6KE13CAE3 vs SMBJP6KE39CAE3TR feature comparison

P6KE13CAE3 Microsemi Corporation

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SMBJP6KE39CAE3TR Microsemi Corporation

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description O-PALF-W2 R-PDSO-C2
Pin Count 2 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 13.7 V 41 V
Breakdown Voltage-Min 12.4 V 37.1 V
Breakdown Voltage-Nom 13 V 39.05 V
Case Connection ISOLATED
Clamping Voltage-Max 18.2 V 53.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 1.38 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 11.1 V 33.3 V
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 1 1
Part Package Code DO-214AA
Additional Feature TR, 7 INCH: 750
JEDEC-95 Code DO-214AA
Moisture Sensitivity Level 1

Compare P6KE13CAE3 with alternatives

Compare SMBJP6KE39CAE3TR with alternatives