P6KE13C-G vs P6SE39C feature comparison

P6KE13C-G Sangdest Microelectronics (Nanjing) Co Ltd

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P6SE39C Semicon Components Inc

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SEMICON COMPONENTS INC
Package Description O-PALF-W2 O-XALF-W2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 14.3 V 42.9 V
Breakdown Voltage-Min 11.7 V 35.1 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2 O-XALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 10.5 V 32 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 39 V
Clamping Voltage-Max 56.4 V
JESD-609 Code e0
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 5 µA
Terminal Finish TIN LEAD

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Compare P6SE39C with alternatives