P6KE130CAHE3/54
vs
MAP6KE130AE3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
MICROCHIP TECHNOLOGY INC
Package Description
DO-15, 2 PIN
ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
137 V
137 V
Breakdown Voltage-Min
124 V
124 V
Breakdown Voltage-Nom
130.5 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
179 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
3.5 V
JEDEC-95 Code
DO-204AC
JESD-30 Code
O-XALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Reference Standard
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
111 V
111 V
Reverse Current-Max
1 µA
Reverse Test Voltage
111 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
3
2
Rohs Code
Factory Lead Time
40 Weeks
JESD-609 Code
e3
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Compare P6KE130CAHE3/54 with alternatives
Compare MAP6KE130AE3 with alternatives