P6KE12CA
vs
P6KE12CHA0
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INTERNATIONAL SEMICONDUCTOR INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW IMPEDANCE
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
12.6 V
13.2 V
Breakdown Voltage-Min
11.4 V
10.8 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
16.7 V
17.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
5 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
10.2 V
9.72 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
72
1
Rohs Code
Yes
Package Description
O-PALF-W2
Breakdown Voltage-Nom
12 V
JEDEC-95 Code
DO-204AC
JESD-609 Code
e3
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101; UL RECOGNIZED
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
Compare P6KE12CA with alternatives
Compare P6KE12CHA0 with alternatives