P6KE110CAHE3/54 vs JAN1N6107A feature comparison

P6KE110CAHE3/54 New Jersey Semiconductor Products Inc

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JAN1N6107A Microsemi Corporation

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Part Life Cycle Code Active Transferred
Ihs Manufacturer NEW JERSEY SEMICONDUCTOR PRODUCTS INC MICROSEMI CORP
Package Description DO-15, 2 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 116 V
Breakdown Voltage-Min 105 V 10.45 V
Breakdown Voltage-Nom 110.5 V 11 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 152 V 15.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-204AC
JESD-30 Code O-XALF-W2 O-XALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Reference Standard AEC-Q101; UL RECOGNIZED MIL-19500/516
Rep Pk Reverse Voltage-Max 94 V 8.4 V
Reverse Current-Max 1 µA
Reverse Test Voltage 94 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 9
Rohs Code No
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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