P6KE10A_B0_00001 vs P6KE10C feature comparison

P6KE10A_B0_00001 PanJit Semiconductor

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P6KE10C Galaxy Microelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description O-PALF-W2 PLASTIC PACKAGE-2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 10.5 V 11 V
Breakdown Voltage-Min 9.5 V 9 V
Breakdown Voltage-Nom 10 V 10 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 14.5 V 15 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -50 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 8.55 V 8.1 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 2
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 5 W

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