P6KE10A-GT3
vs
P6KE10COX.200
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
NEW ENGLAND SEMICONDUCTOR
Package Description
O-PALF-W2
O-MEDB-N2
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
10.5 V
Breakdown Voltage-Min
9.5 V
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-15
JESD-30 Code
O-PALF-W2
O-MEDB-N2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
DISK BUTTON
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
8.55 V
8.55 V
Surface Mount
NO
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
NO LEAD
Terminal Position
AXIAL
END
Base Number Matches
2
1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
10 V
Clamping Voltage-Max
14.5 V
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
10 µA
Compare P6KE10A-GT3 with alternatives
Compare P6KE10COX.200 with alternatives