P6KE10A vs P6KE10A-T3 feature comparison

P6KE10A New England Semiconductor

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P6KE10A-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description PLASTIC, DO-15, 2 PIN O-PALF-W2
Reach Compliance Code unknown unknown
Breakdown Voltage-Nom 10 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 14.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 8.55 V 8.55 V
Reverse Current-Max 10 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 75 3
Breakdown Voltage-Max 10.5 V
Breakdown Voltage-Min 9.5 V
Moisture Sensitivity Level 1
Reference Standard UL RECOGNIZED

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