P6KE100C
vs
MAP6KE100AE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
110 V
105 V
Breakdown Voltage-Min
90 V
95 V
Breakdown Voltage-Nom
100 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
144 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-15
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
600 W
600 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
81 V
85.5 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
10
Base Number Matches
28
1
Package Description
ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
Factory Lead Time
40 Weeks
Compare P6KE100C with alternatives
Compare MAP6KE100AE3 with alternatives