P6KE10-G
vs
P6KE10ACOX.120
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
NEW ENGLAND SEMICONDUCTOR
|
| Package Description |
O-PALF-W2
|
O-MEDB-N2
|
| Reach Compliance Code |
unknown
|
unknown
|
| Breakdown Voltage-Max |
11 V
|
|
| Breakdown Voltage-Min |
9 V
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-15
|
|
| JESD-30 Code |
O-PALF-W2
|
O-MEDB-N2
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
DISK BUTTON
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
5 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
UL RECOGNIZED
|
|
| Rep Pk Reverse Voltage-Max |
8.1 V
|
8.55 V
|
| Surface Mount |
NO
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
NO LEAD
|
| Terminal Position |
AXIAL
|
END
|
| Base Number Matches |
4
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Breakdown Voltage-Nom |
|
10 V
|
| Clamping Voltage-Max |
|
14.5 V
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Reverse Current-Max |
|
10 µA
|
|
|
|
Compare P6KE10-G with alternatives
Compare P6KE10ACOX.120 with alternatives