P6KE10 vs P6KE10A_B0_00001 feature comparison

P6KE10 Galaxy Microelectronics

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P6KE10A_B0_00001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD PAN JIT INTERNATIONAL INC
Part Package Code DO-15
Reach Compliance Code unknown not_compliant
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max 11 V 10.5 V
Breakdown Voltage-Min 9 V 9.5 V
Breakdown Voltage-Nom 10 V 10 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 15 V 14.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -50 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 8.1 V 8.55 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 69 1
Pbfree Code Yes
Package Description O-PALF-W2
ECCN Code EAR99
HTS Code 8541.10.00.50
JESD-609 Code e3
Reference Standard UL RECOGNIZED
Terminal Finish Tin (Sn)

Compare P6KE10 with alternatives

Compare P6KE10A_B0_00001 with alternatives