P6FMBJ39 vs SMBJ26-G feature comparison

P6FMBJ39 Rectron Semiconductor

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SMBJ26-G Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer RECTRON LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-214AA
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature LOW ZENER IMPEDANCE
Breakdown Voltage-Max 42.9 V 36.6 V
Breakdown Voltage-Min 35.1 V 28.9 V
Clamping Voltage-Max 56.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 31.6 V 26 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Base Number Matches 20 2
Reference Standard UL RECOGNIZED

Compare P6FMBJ39 with alternatives

Compare SMBJ26-G with alternatives