P600M-E3/54
vs
CR6A10GPPTIN/LEAD
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Date Of Intro
2019-10-31
2018-01-31
Additional Feature
LOW LEAKAGE CURRENT
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.4 V
1 V
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
400 A
400 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-50 °C
-65 °C
Output Current-Max
6 A
6 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Reverse Current-Max
5 µA
10 µA
Reverse Recovery Time-Max
2.5 µs
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
3
1
Rohs Code
Breakdown Voltage-Min
1000 V
JESD-609 Code
e0
Reverse Test Voltage
1000 V
Terminal Finish
TIN LEAD
Compare P600M-E3/54 with alternatives
Compare CR6A10GPPTIN/LEAD with alternatives