P600G-E3/73
vs
P600G-GT3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Date Of Intro
2019-10-31
Additional Feature
LOW LEAKAGE CURRENT
HIGH RELIABILTY
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.3 V
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
400 A
400 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-50 °C
Output Current-Max
6 A
6 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
400 V
400 V
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
2.5 µs
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
3
2
Rohs Code
Yes
Package Description
O-PALF-W2
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Compare P600G-E3/73 with alternatives
Compare P600G-GT3 with alternatives